| 摘要 |
PROBLEM TO BE SOLVED: To detect the crystal defects of a single-crystal silicon surface easily by measuring the light and shade of an anodic oxide film by the difference of the growth thickness of the anodic oxide film formed on the surface of a single-crystal silicon substrate. SOLUTION: A single-crystal silicon substrate 4 and a platinum counter electrode 3 are dipped in an electrolytic bath 2. The single-crystal silicon substrate 4 is used as an anode and the platinum counter electrode 3 as a cathode, and a specified current is made to flow between the single-crystal silicon substrate 4 and the platinum counter electrode 3. An Al evaporated film 8 is formed on the whole rear of the silicon substrate 4, the Al evaporated film and a lead wire 5 are fixed with conductive paints 9, and an insulating film 10 is formed. When the silicon substrate 4 is anodized, an anodizing electrolytic current is concentrated to crystal defects on the surface of the silicon substrate 4, oxide films 7 are grown in the crystal defects more thickly, and light and shade are generated in the oxide films 7. Accordingly, the crystal defects on the outermost surface of the silicon substrate are detected easily. |
