| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor photodetector which has an improved frequency response characteristic by suppressing floating capacity increase due to a light shielding metal film. SOLUTION: A p-type diffusion area 20 is provided on a part of an window layer 16, and on the window layer 16 around the diffusion layer 20, a shielding film laminate 26, which has a light shielding metal film as a middle layer in an insulating film, is provided. A capacitor is formed between the light shielding metal film and the window layer 16. A metal bonding pad electrode 36, which is electrically connected with the light shielding metal film and exposes from the surface of the insulating film by penetrating the insulating film part on the light shielding metal film, is also provided. The potential of the light shielding metal film can be dropped to the ground by using bonding wire through the metal bonding pad.</p> |
