发明名称 CHARGING OF BOOTSTRAP CAPACITANCE BY LDMOS
摘要 PROBLEM TO BE SOLVED: To ensure low consumption and high immunity to breakdown of an integrated device by sustaining the open state of a switch during the charging period of a bootstrap capacitance and closing the switch when the charging voltage of bootstrap capacitance reaches a reset threshold level. SOLUTION: A switch INT1 interrupt a source node from then first junction of drain of direct bias junction normally present between the source node and a current source connected with the ground potential during the variation phase of a bootstrap capacitance Cboot. When the variable voltage of bootstrap capacitance Cboot reaches a preset threshold level, the switch INT1 is turned off. Furthermore, an inrush current is limited when a parasitic transistor is triggered, in any case, by means of a limit resistor R inserted between the body node of LDMOS structure and the current source connected with the ground potential.
申请公布号 JPH0965571(A) 申请公布日期 1997.03.07
申请号 JP19960143765 申请日期 1996.05.14
申请人 SGS THOMSON MICROELETTRONICA SPA 发明人 KURAUDEIO DEIATSUTSUI;FUABURITSUIO MARUTEINIYOONI;MARIO TARANTORA
分类号 G01R19/165;H01L21/8234;H01L27/088;H02J1/00;H03K17/06;H03K17/0814 主分类号 G01R19/165
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