| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the mutual interference phenomenon between semiconductor chips at the time of switching, and suppress the emission of electromagnetic noise by providing each contact terminal with a ring-shaped ferromagnetic body, in a pressure contact type of semiconductor device provided with a contact terminal doubling as pressurizer, a conductor, and a heat radiator. SOLUTION: An IGBT chop 1 and a flywheel diode chip 4 are positioned with a positioning guide 12 on a common electrode 9 on collector side, and those re fixed by solder or the like. An emitter electrode made at a MOS part 2 is connected to a collector electrode 3, and a gate electrode is connected to the gate pad 7. The collector electrode 3 contacts by pressure with the contact terminal 8, and the contact terminal 8 is contact by pressure with a common electrode 10 on emitter side. The gate pad 7 is connected to the gate liner 5 arranged at the periphery by an aluminum lead wire 6. A step 14 is provided at the marginal part of the contact terminal 8 on the side where it contacts with the common electrode 10 on emitter side, and a permalloy ring 11 is arranged at this step part 14.</p> |
