| 摘要 |
PROBLEM TO BE SOLVED: To enhance the photosensitivity and the photoconductivity of an amorphous silicon-germanium alloy thin film and of an amorphous silicon-carbon alloy thin film by a method wherein a periodic structure which is composed of at least one element out of relevant elements and whose thickness is that of one monoatomic layer or lower is provided in a direction perpendicular to the main face of the thin film. SOLUTION: When a silicon-germanium alloy is formed on an Si substrate formed on the (100) plane as a plane orientation, silicon and germanium are formed a monoatomic layer by a monoatomic layer. In this case, silicon atoms and germanium atoms cannot be arranged orderly in such a way that a crystal alloy is formed. However, when the silicon and the germanium are formed in such a way that a film thickness corresponding to the thickness of one monoatomic layer is formed sequentially, a thin film which is composed mainly of an Si-Ge bond as a bond of different kinds of atoms by the silicon and the germanium can be formed. Thereby, the photosensitivity and the photoconductivity of an amorphous alloy thin film can be enhanced. |
