| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a large-size flat semiconductor device including at least a semiconductor pellet put on a major surface and connected to an outer terminal with a wire, by reducing the thickness of the device encapsulated with resin to a given level or below and the heigh difference between a frame plate and an upper face of the pellet or between upper and lower faces of the frame plate to a given level or below. SOLUTION: A frame plate is made up of a main insulating resin frame plate 9a with a thickness of 0.1 to 0.15mm and a lead 9b bonded in a body with an adhesive resin layer 10 made of polyimide-based material with a thickness of 0.02 to 0.05mm. An electrode for a semiconductor pellet 11 with a thickness of 0.2 to 0.3mm and area of 40mm<2> or above is bonded to the face of the main frame plate 9a and connected to the lead 9b with a bonding wire 13. Then, the main frame plate 9a, the pellet 11, and part of the lead 9b are encapsulated with sealing resin layers 13 and 13'. Then, a thin semiconductor device with good flatness and a thickness of 0.5 to 1.0mm can be obtained.</p> |
