| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a vapor growth device using a reflective plate of a structure, wherein the reflection efficiency of the reflective plate is not reduced as much as the reflection efficiency of a conventional reflective plate even after the plate is subjected to heating treatment and moreover, the plate is cleaned with an HNO3 -HF aqueous solution according to the need to return the surface of the plate to its former smooth state and the reflection efficiency can be improved. SOLUTION: In a vapor growth device of a structure, wherein a wafer is supported by a wafer support plate in the interior of a reaction chamber, a heater is provided under the lower part of the wafer supported by the wafer support plate and a thin film is vapor-grown on the surface of the wafer, a reflective plate 14, which reflects at least downward heat of the heater, is provided, a heat insulating cylinder 40 is provided in such a way as to encircle the outer periphery on the side of the heater and the plate 14 is formed of a glassy carbon.</p> |
