| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a nonvolatile memory which operates at a high speed with little fatigue of the ferroelectric and is suited to reduction of the area, superior in the reproducibility and stability of the gate characteristic, with no carrier injected into the ferroelectric, and superior in the production yield. SOLUTION: On an Si single crystal substrate 1 having a source region 2 and drain region 3, an Si oxide film 4, oriented CeO2 film 5 and oriented PbTiO3 film 6 are formed and conductive film 7 is formed on other part than the part covered with an insulation film 8. A transistor having a multilayer structure composed of the films 4-6 acting as a gate thereof. The film 4 acts as a carrier injection blocking layer. |
