| 摘要 |
PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit comprised by using a MOS type field effect transistor and capable of easily setting the temperature coefficient of a reference voltage at a prescribed value. SOLUTION: This circuit is equipped with an operational amplifier 10 in which a resistor 12 (resistance value R1) and a resistor 14 (resistance value R2) are connected between an output terminal and noninverted and inverted input terminals, a transistor TR1 connected to the noninverted input terminal, and a transistor TR2 connected to the inverted input terminal via a resistor 16 (resistance value R3). The gate width Wand the gate length L of the transistors TR1, TR2 are set equally, respectively, and moreover, the resistance values R1-R3, the gate width W, the gate ratio L, namely transistor characteristics are related so as to set R1=R3, (W/L)x R3=0.7×10<6>Ω, and R2/R3=4.6. Consequently, the temperature coefficient of the reference voltage Vo outputted from the reference voltage generation circuit 2 is set at a value nearly equal to the minimum value of the temperature coefficient provided in this circuit.
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