| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photovoltaic element which reduces a problem that the movement of light carriers generated by a photoelectric conversion caused in a reverse junction part by a method wherein a substrate in which up to a part p' has been formed is heated and treated at a temperature which is higher than a substrate temperature to form a part n' and the part n' is then formed. SOLUTION: While a belt-shaped substrate is being moved at a constant speed, plasmas are formed simultaneously in respective film formation chambers 102A to 104A, and semiconductor layers are formed, inside the respective film formation chambers, on the belt-shaped substrate which is moved continuously. Semiconductor laminated films of an nipnipnip structure are formed continuously. In the film formation chambers excluding the film formation chambers 102B, 102C, the belt-shaped substrate is heated preliminarily for 10 seconds up to the same temperature as a film formation temperature. In the film formation chambers 102B, 102C, the belt-shaped substrate is heated preliminarily up to a temperature at the film formation temperature or higher. Thereby, an sbnormal current-voltage characteristic is eliminated, and it is possible to obtain a three-layer tandem photovoltatic element whose photoelectric conversion efficiency is high and which is composed of the nipnipnip structure. |
