| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to form boundary parts to gentle angles with simple stages and to improve the step coverage of a second thin film layer by forming a resist film on a first thin film layer material and stepwise or continuously increasing the flow rate ratio of the etching gas of the resist film to pattern the first thin film layer. SOLUTION: The upper part 2b of the flank of the first thin film layer 2 is so formed as to have the gentler angle to a substrate 1 than the lower part 2c of the flank. Namely, the upper part 2b of the flank and the lower part 2c of the flank are so formed as to attainθ2 <θ1 <45 deg.. After a first thin film circuit material 2 is deposited and formed on the substrate 1, a resist film 4 is formed on the first thin film circuit material 2. The first thin film circuit 2 is patterned by stepwise or continuously increasing the flow rate of the etching gas of the resist film 4. As a result, the step coverage of the second thin film layer 3 formed in such a manner is improved and the occurrence of the degradation in the breakdown voltage, disconnection, etc., of the second thin film layer 3 is prevented.</p> |
