摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an electric field emission type cold cathode and the manufacture of it capable of lowering operating voltage by shortening the distance between a gate and an emitter, and inhibiting the effect of the possible destruction of partial emitter from spreading over the whole surface. SOLUTION: A recessed part 12, having a lower part opening diameter smaller than an upper part opening diameter, is formed on an SOI substrate 11 by utilizing the anisotropic etching of Si to etch an SiO2 layer 13 to form a hole 14, and then A1 is vacuum-deposited from an oblique direction, while rotating the SOI substrate 11, to form an Al layer 15. After that, Mo, emitter material, is vacuum-deposited onto the substrate 11 from a vertical direction to conically deposit the Mo in the hole 14, by utilizing the deposition of a layer 16, and also the filling of the diameter of the hole 14 to form an emitter 16a.</p> |