发明名称 ELECTRIC FIELD EMISSION TYPE COLD CATHODE, AND MANUFACTURE OF IT
摘要 <p>PROBLEM TO BE SOLVED: To obtain an electric field emission type cold cathode and the manufacture of it capable of lowering operating voltage by shortening the distance between a gate and an emitter, and inhibiting the effect of the possible destruction of partial emitter from spreading over the whole surface. SOLUTION: A recessed part 12, having a lower part opening diameter smaller than an upper part opening diameter, is formed on an SOI substrate 11 by utilizing the anisotropic etching of Si to etch an SiO2 layer 13 to form a hole 14, and then A1 is vacuum-deposited from an oblique direction, while rotating the SOI substrate 11, to form an Al layer 15. After that, Mo, emitter material, is vacuum-deposited onto the substrate 11 from a vertical direction to conically deposit the Mo in the hole 14, by utilizing the deposition of a layer 16, and also the filling of the diameter of the hole 14 to form an emitter 16a.</p>
申请公布号 JPH0963464(A) 申请公布日期 1997.03.07
申请号 JP19950214877 申请日期 1995.08.23
申请人 TOSHIBA CORP 发明人 ONO TOMIO;SAKAI TADASHI;CHO TOSHI
分类号 H01J9/02;H01J1/30;H01J1/304;H01J29/04;H01J31/12;(IPC1-7):H01J1/30 主分类号 H01J9/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利