MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that the manufacturing cost can be suppressed without increasing the number of steps in the case of forming an interlayer film of the device, excellent flatness, crack resistance and moisture resistance are provided and no corrosion of interconnection occurs. SOLUTION: A silicon oxide film 4 is so formed as to cover the first interconnection 3 formed on a substrate 1 via a silicon oxide film 2. Then, the film 4 is coated with a thick inorganic SOG film 5, heat treated, then formed with a silicon oxide film 6, and a viahole 24 is formed by a predetermined mask. The residual gas 25 such as CO2 , H2 O adsorbed to the sidewall of the viahole are desorbed by heat treating under the pressure of 10<-3> Torr at 150 to 550 deg.C in the state that the part of the film 5 is exposed with the side of the viahole 24. With this step, the corrosion of the interconnection formed thereafter is prevented to be able to obtain a semiconductor device having high reliability.