FORMATION METHOD OF METAL LAYER AND FORMATION METHOD OF INTERCONNECTION

摘要

PROBLEM TO BE SOLVED: To provide a metallic layer forming method by which an extremely thin film can be formed by optimizing the vapor-depositing condition of a metal and a metallic wiring forming method for burying a contact hole having a high aspect ratio by using the metallic layer forming method. SOLUTION: The wettability of a substrate which indicates the adsorptivity of sputtered metallic atoms to the substrate is improved by executing the vapor- depositing process of the metallic layer after a wafer is cooled so that the temperature of the wafer can falls within a range from -25 deg.C to room temperature so that the grain boundary energy per unit volume can be increased by the increase of the number of nucleuses generating positions. Therefore, a uniform extremely thin metallic film can be obtained by improving the surface condition of the vapor-deposited metallic layer. In addition, the filling characteristic of a contact hole having a high aspect ratio with aluminum can be improved.