| 摘要 |
PROBLEM TO BE SOLVED: To repair oxygen deficiency without causing ion damage, by a method wherein, when a tantalum oxide film is heat-treated in an oxidizing atmosphere, the heat treatment is performed by irradiating the tantalum oxide film with atomic state oxygen. SOLUTION: A radical source 1 which can produce electrically neutral oxygen radicals by RF electrodeless discharge is introduced. By applying high frequency power of 13.56MHz to an RF coil 2, discharge is caused in oxygen in a discharge tube 3. Gas molecules which have generated plasma discharge dissociate as a result of collision against the inner wall of the discharge tube 3, and turn to active atomic state oxygen (oxygen radicals). A specimen 6 is irradiated with the oxygen radicals which are released in a vacuum chamber from small holes of an aperture plate 4. Ion concentration in oxygen radicals decreases. Heat treatment temperature at 300 deg.C or higher is effective. Oxygen deficiency repairing effect increases as the temperature becomes higher. Heat treatment is performed at 600 deg.C or lower for at most 10 minutes. Oxygen deficiency can be repaired without causing ion damage in a Ta2 O5 film. |
