FERROELECTRIC MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To enable the high speed operation, reduction of the fatigue of the ferroelectric, and adaptation to the area reduction by orienting an oxide film formed on a part of the gate electrode of a transistor formed on a semiconductor single crystal substrate and increasing the dielectric strength of this film to a specified value or more. SOLUTION: An oriented oxide film 5 is formed between a source 2 and a drain on a semiconductor single crystal substrate 1, the substrate 1 is heat treated to form a carrier injection blocking layer 4 made of SiO2 between the film 5 and substrate 1 and the dielectric strength of the multilayer film of the layer 4 and film 5 is increased to 4MV/cm or more. This enables the high speed operation, reduction of the fatigue of the ferroelectric, and adaptation to the area reduction.