| 摘要 |
<p>A laminate for forming ohmic electrode having practically satisfactory properties for contact with a III-V compound semiconductor such as GaAs, and an ohmic electrode obtained by using this laminate. A semiconductor layer such as non-single-crystal In0.7Ga0.3As layer, a thin metal film such as Ni, a thin metal nitride film such as Wn and a thin high-melting metal film such as W are successively formed on a III-V compound semiconductor substrate such as n+-type GaAs substrate by sputtering. These films are then patterned by lifting-off to form a laminate for forming ohmic electrode. Then, the laminate is heat-treated by, for example, the RTA method at 500 to 600 °C, e.g., at 550 °C for one second to form an ohmic electrode.</p> |
