发明名称 INTEGRATED CIRCUIT MEMORY WITH BACK END MODE DISABLE
摘要 <p>A memory circuit is described which can operate in one of a number of operating modes. The operating mode of the memory circuit can be changed in a non-volatile manner after the memory circuit is packaged to reduce production scrap or meet market demands. Disable circuitry is described which includes an anti-fuse that can be externally selectively blown to disable an operating mode. Control circuitry included in the memory circuit enables a new operating mode after the first operating mode is disabled. A method of selectively disabling an operating mode is described. A hierarchical scheme is also desdribed for enabling a new operating mode from a group of operating modes, for example page-mode, extended data output (EDO), or burst EDO.</p>
申请公布号 WO1997008701(A1) 申请公布日期 1997.03.06
申请号 US1996013711 申请日期 1996.08.23
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址