发明名称 CMOS BUFFER CIRCUIT HAVING POWER-DOWN FEATURE
摘要 <p>The gate of a P-channel pull-up transistor (MP1) connected between an input node (A) and a supply voltage (VDD) in a buffer circuit (21) is coupled to a test node (22). An N-channel pull-down transistor (MNpd) is connected between the input node (A) and ground and has a gate connected to the test node (22). A logic low signal provided to the test node (22) allows the circuit (21) to operate normally. During test mode, a logic high signal is provided to the test node (22) to turn off the P-channel pull-up transistor (MP1) and thus prevent DC current flow in the circuit via the pull-up transistor (MP1). This logic high signal also turns on the pull-down transistor (MNpd) and, by shorting the input node (A) to ground potential, prevents any other DC crossover currents from flowing in the circuit (21).</p>
申请公布号 WO1997008832(A1) 申请公布日期 1997.03.06
申请号 US1996013298 申请日期 1996.08.23
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