| 摘要 |
An apparatus for etching and for stripping resist from a semiconductor wafer has a microwave source for creating a plasma from which a gas with a high concentration of free radicals is discharged, and an RF source for creating a plasma of the discharged gas to produce high ashing rates. The wafer is positioned over a hotplate and can be moved during an etching or stripping method over a range of processing positions. Moving the wafer allows control of the energy; control of the anisotropy of walls formed during etching; processing with or without heating the wafer; alternating high and low temperature processing; and etching or stripping resist on two sides of a wafer simultaneously. |
