发明名称 |
METHOD AND APPARATUS FOR LOW ENERGY ELECTRON ENHANCED ETCHING OF SUBSTRATES |
摘要 |
A method of low-damage, anisotropic etching of substrates including mounting the substrate (68) upon the anode (52) in a DC plasma reactor (10) and subjecting the substrate (68) to a plasma of low-energy electrons and a species reactive with the substrate (68). An apparatus (10) for conducting low-damage, anisotropic etching including a DC plasma reactor (14), a permeable wall hollow cold cathode (32), and anode (52), and means (54) for mounting the substrate (68) upon the anode (52).
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申请公布号 |
WO9708362(A1) |
申请公布日期 |
1997.03.06 |
申请号 |
WO1996US13915 |
申请日期 |
1996.08.28 |
申请人 |
GEORGIA TECH RESEARCH CORPORATION |
发明人 |
MARTIN, KEVIN, P.;GILLIS, HARRY, P.;CHOUTOV, DMITRI, A. |
分类号 |
H01J37/32;H01L21/306;H01L21/3065;(IPC1-7):C23F1/02 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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