| 摘要 |
Al, B or Al-B silicate glass film is deposited on a substrate by sputtering Si in an atmosphere <FORM:1096925/C6-C7/1> containing A, O2 and volatile alkoxides or alkyds e.g. B isopropylate, Al ethoxide and Al isopropoxide. In a vacuum chamber 10 the substrate 13 e.g. a semi-conductor is mounted on a steel, water cooled, grounded anode 12 beneath a cathode 11 attached to a heat sink 15 and shielded by screen 14. The sputtering rate may be increased by a magnetic field. The volatile compounds are introduced by bubbling A and O2 through B isopropylate and A ethoxide in tank 23 or over the frozen liquid.ALSO:<PICT:1096925/C1/1> Al, B or Al-B silicate glass film is deposited on a substrate by sputtering Si in an atmosphere containing A, O2 and volatile alkoxides or alkyds e.g. B isopropylate, Al ethoxide and Al isopropoxide. In a vacuum chamber 10 the substrate 13 e.g. a semi-conductor is mounted on a steel, water-cooled, grounded anode 12 beneath a cathode 11 attached to a heat sink 15 and shielded by screen 14. The sputtering rate may be increased by a magnetic field. The volatile compounds are introduced by bubbling A and O2 through B isopropylate and A ethoxide in tank 23 or over the frozen liquid. |
