| 摘要 |
A chip sized semiconductor device (30) includes a semiconductor chip (32) having upper and lower surfaces. The chip (32) has electrodes (36) formed on its upper surface. An electrically insulating passivation film (34) is formed on the upper surface of the semiconductor chip (32) except for areas where the electrodes (36) exist. An anisotropic conductive sheet (38) has an upper surface provided with a circuit pattern (40) formed on it and a second surface adhered to the passivation film (34). The circuit pattern (40) has inner and outer connecting portions. An electrically insulating film (42) covers the upper surface of the anisotropic conductive sheet (38) so that the outer connecting portions of the circuit pattern (40) are exposed to be connected to external connecting terminals (46). The anisotropic conductive sheet (38) is partially pressed at positions corresponding to the electrodes (36), so that the inner portions of the circuit pattern (40) are thereby electrically connected to said electrodes (36) of the semiconductor chip (32). <IMAGE> |
