A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure and a method for producing the same

摘要

A laminated semiconductor ceramic capacitor (4) with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundary-insulated structure, a plurality of Ni inner electrodes (2) and outer electrodes (3), wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corresponding opposite edges of the ceramic block alternatively one by one; and the outer electrodes are electrically connected to the corresponding edges of the inner electrodes, respectively.