| 摘要 |
A method is provided for fabrication of a local interconnect polycide layer for connection of active devices within a silicon substrate. A polysilicon layer (20) is deposited over the insulating layer (15) before contact openings (25) are etched. Metal silicide (40) such as tungsten silicide is then deposited over the insulating layer and into the contact opening, forming direct contact between the silicide layer and the active areas. The polysilicon layer acts merely as an adhesion layer while the silicide serves as an interconnect. Ohmic contact is achieved without the need to dope the polysilicon or the silicide. |
