Method of etching titanium nitride and insulating oxide layers using a gas comprising carbon-fluoride and carbon-oxide.

摘要

A process for etching TiN on a substrate comprises: placing the substrate in a process zone and exposing it to a gaseous etchant consisting of a carbon-fluoride gas and a carbon oxygen gas under plasma conditions. Also claimed is a method as above for etching a TiN layer overlain by an insulative oxide layer, using a plasma formed in a C2F6/CO etchant. Further claimed is a method for etching the insulative oxide by a carbon-fluoride etchant-gas plasma, exhausting the gaseous by-products so-formed, and then etching the TiN by a plasma in a CH3F/CO2 etchant.