发明名称 |
DEVICE AND METHOD FOR PLASMA TREATMENT |
摘要 |
There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms. Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material. When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed. <IMAGE>
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申请公布号 |
EP0760526(A1) |
申请公布日期 |
1997.03.05 |
申请号 |
EP19950918726 |
申请日期 |
1995.05.17 |
申请人 |
HITACHI, LTD. |
发明人 |
KAJI, TETSUNORI;KANAI, SABURO;ITO, SATOSHI;HAMASAKI, RYOUJI;ONO, TETSUO;USUI, TATEHITO;TAKAHASHI, KAZUE;TAGO, KAZUTAMI |
分类号 |
H01J37/32;(IPC1-7):H01L21/302 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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