发明名称 DEVICE AND METHOD FOR PLASMA TREATMENT
摘要 There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms. Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material. When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed. <IMAGE>
申请公布号 EP0760526(A1) 申请公布日期 1997.03.05
申请号 EP19950918726 申请日期 1995.05.17
申请人 HITACHI, LTD. 发明人 KAJI, TETSUNORI;KANAI, SABURO;ITO, SATOSHI;HAMASAKI, RYOUJI;ONO, TETSUO;USUI, TATEHITO;TAKAHASHI, KAZUE;TAGO, KAZUTAMI
分类号 H01J37/32;(IPC1-7):H01L21/302 主分类号 H01J37/32
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