| 发明名称 |
SEMICONDUCTOR MEMORY HAVING A FERROELECTRIC CAPACITOR AND A TiON BARRIER FILM |
| 摘要 |
A semiconductor device having a ferroelectric or polycrystalline silicon gate, wherein a humidity-resistant hydrogen-barrier film such as a TiN film or a TiON film is formed on the ferroelectric or polycrystalline silicon gate by the film-forming method which does not release hydrogen. <IMAGE> |
| 申请公布号 |
EP0514547(B1) |
申请公布日期 |
1997.03.05 |
| 申请号 |
EP19910914601 |
申请日期 |
1991.08.20 |
| 申请人 |
RAMTRON INTERNATIONAL CORPORATION |
发明人 |
TAKENAKA, KAZUHIRO;FUJISAWA, AKIRA |
| 分类号 |
H01L27/04;H01L21/314;H01L21/318;H01L21/822;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8246;H01L23/29;H01L23/31;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/108;H01L27/115 |
主分类号 |
H01L27/04 |
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