| 摘要 |
PCT No. PCT/EP95/01960 Sec. 371 Date Sep. 9, 1996 Sec. 102(e) Date Sep. 9, 1996 PCT Filed May 23, 1995 PCT Pub. No. WO96/29729 PCT Pub. Date Sep. 26, 1996A method for thin film or semiconductor technology, is discussed in which a metallization layer can be provided on an insulating layer, allowing opening of through holes in the insulating layer simultaneously with the same mask. A substrate 1 has a first 3 and a second 4 insulating layer on its surface 2, a cover layer 5 on the second insulating layer 4, a structured mask layer 6 on the cover layer 5, and through openings 7 filled with metal and extending from the rear side of the substrate as far as the substrate surface 2. The mask layer 6 features openings in the areas facing the through openings 7 and in the areas to be covered with a metal layer 8. The cover layer 5 is opened in the areas which are not covered by the structured mask layer 6 by means of a first etching process. Following this, the second insulating layer 4 is laser ablated in the areas facing the filled through openings 7, using dielectric mask. Then, a second etching process simultaneously opens the first insulating layer 3 in the areas facing the filled through openings 7, and the second insulating layer 4 in the areas to be covered with a metal layer 8, whereby the through openings 7 are completely freed from the first insulating layer 3, the second insulating layer 4 is completely removed in the areas which are to be covered with a metal layer 8, and the first insulating layer 3 is substantially retained on the substrate surface 2. |
