发明名称 Process for producing bismuth compounds, and bismuth compounds
摘要 <p>The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere. &lt;IMAGE&gt;</p>
申请公布号 EP0760400(A2) 申请公布日期 1997.03.05
申请号 EP19960113346 申请日期 1996.08.20
申请人 SONY CORPORATION 发明人 AMI, TAKAAKI;HIRONAKA, KATSUYUKI;IKEDA, YUJI
分类号 C01G29/00;C01G33/00;C01G35/00;C04B35/453;C04B35/495;C23C14/08;C23C16/40;C23C16/56;H01G4/12;H01L21/822;H01L27/04;(IPC1-7):C23C16/40;C04B35/00 主分类号 C01G29/00
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