发明名称 |
Process for producing bismuth compounds, and bismuth compounds |
摘要 |
<p>The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere. <IMAGE></p> |
申请公布号 |
EP0760400(A2) |
申请公布日期 |
1997.03.05 |
申请号 |
EP19960113346 |
申请日期 |
1996.08.20 |
申请人 |
SONY CORPORATION |
发明人 |
AMI, TAKAAKI;HIRONAKA, KATSUYUKI;IKEDA, YUJI |
分类号 |
C01G29/00;C01G33/00;C01G35/00;C04B35/453;C04B35/495;C23C14/08;C23C16/40;C23C16/56;H01G4/12;H01L21/822;H01L27/04;(IPC1-7):C23C16/40;C04B35/00 |
主分类号 |
C01G29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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