PROCESS AND DEVICE FOR OBTAINING UNFISSURED CRYSTALS

摘要

PCT No. PCT/DE95/00667 Sec. 371 Date Oct. 29, 1996 Sec. 102(e) Date Oct. 29, 1996 PCT Filed May 12, 1995 PCT Pub. No. WO95/31591 PCT Pub. Date Nov. 23, 1995A process and an apparatus for obtaining unfissured crystals of GaAs after the crystal has been formed by direction solidification from a melt in a quartz crucible. The quartz crucible is immersed in molten potassium hydroxide or sodium hydroxide at a temperature of 450 DEG to 600 DEG C.