| 摘要 |
A thermoelectric semi-conductor has a component (1) consisting of: .Te.47-50 atomic % .Ge.38-49 atomic % .Pb + Sn.3-12 atomic % the amount of Sn being 0-10% of the atomic per cent of Pb present, and a component (2) consisting of at least one of Bi, Sb, Bi2 Te3, Sb2 Te3/t in an amount such that the total Bi and Sb atoms are 2-10% of the number of atoms of component (1). A specific composition is annealed in hydrogen at 620 DEG C. for 10-12 hours and cooled at 3 DEG C./hour until below 300 DEG C.
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