| 摘要 |
<p>A method of obtaining a highly reliable semiconductor device by decreasing hygroscopic property of an insulating film of SiOF. In manufacturing a semiconductor device using a fluorine-containing silicon oxide film as an interlayer insultating film, fluorine-containing silicon oxide film is formed in an atmosphere containing an inert gas (14) in addition to source gases (11 to 13).</p> |
