SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS

摘要

A first partial region (4) of the surface (3) of the seed crystal (2) is the crystallisation area for the monocrystal (6) grown by epitaxy from a gas phase and a second partial region (5) has a coating (7) which is chemically resistant to the seed crystal (2) and the gas phase and does not melt at the growing temperatures. This prevents thermal degradation on the seed crystal (2) and improves the quality of the monocrystal (6) produced.