发明名称 |
Verfahren zum Trocknen von Silizium |
摘要 |
The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between .001 and 50 %. By adding a gas mixture containing O2/O3 immediately after the drying process is finished, the silicon surface is hydrophilized. By adding a gas mixture containing O2/O3 during the drying process, cleaning takes place as the ozone enters the solution on the liquid surface.
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申请公布号 |
DE19531031(A1) |
申请公布日期 |
1997.02.27 |
申请号 |
DE19951031031 |
申请日期 |
1995.08.23 |
申请人 |
ICTOP ENTWICKLUNGSGESELLSCHAFT MBH, 95490 MISTELGAU, DE |
发明人 |
SCHNELLENBERGER, WILHELM, 95437 CREUSEN, DE;HERRMANNSDOERFER, DIETER, 95489 MISTELGAU, DE |
分类号 |
H01L21/304;H01L21/00;H01L21/306;(IPC1-7):C01B33/02;C01B33/037 |
主分类号 |
H01L21/304 |
代理机构 |
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主权项 |
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地址 |
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