| 摘要 |
PURPOSE:To make it possible to obtain a quantum interference element having an adaptability to a planar process by a method wherein an inversion layer of a multiply-connected form is formed of inversion layers, which are induced by a plurality of pieces of gate electrode parts, on the surface of a semiconductor substrate. CONSTITUTION:Two gate electrodes 4 and 5 insulated from each other are provided on a semiconductor substrate 1 and a surface inversion layer of a multiply-connected form is constituted of inversion layers, which are induced by a plurality of these electrodes 4 and 5, to respectively give individually the potentials of the inversion layer by the electrodes 4 and 5. That is, a difference is generated between the potentials of two paths, through which electrons are made to flow, as well according to a potential difference between the potentials of these two electrodes 4 and 5 and a state of interference is varied. Thereby, a high-gm device can be realized by a consumed power, which is far low compared to a normal MOSFET, and moreover, an adaptability to a planar process of a MOSLSI is obtained. |
