| 摘要 |
A monolithic integrated circuit utilizing areas associated with unused devices for wiring signal lines, thereby implementing effective wiring and improving high frequency characteristics. A common substrate (22) consisting of a semiconductor substrate (1), and active devices (2), capacitor electrodes (6) and resistors (21) formed on the semiconductor substrate is followed by a dielectric film (23), a ground metal (25), a dielectric film (28) whose thickness is equal to or greater than 1 mu m, and signal lines (29). A desired circuit is formed by connecting the signal lines (29) with electrodes of the active devices (2) and other element via through holes (31), holes (24) in the dielectric film (23), and windows (26) of the ground metal (25). The windows (26) of the ground metal are formed over portions of active devices which are used as components of the circuit. <IMAGE> |
