发明名称 |
Vessel of pyrolytic boron nitride |
摘要 |
<p>Proposed is an improvement in a vessel, e.g., crucible, of pyrolytic boron nitride (PBN) used, for example, in the process of molecular beam epitaxy for melting silicon and the like at a high temperature. Different from conventional PBN crucibles used for such a process, in which contamination of high-purity silicon is unavoidable by the reaction of molten silicon with PBN or a thermal decomposition products of boron nitride, the inventive PBN vessel is provided on the surface with a protective coating layer of pyrolytic graphite or a refractory metal such as platinum so as not to cause troubles due to contamination of high-purity silicon melted therein with the crucible materials.</p> |
申请公布号 |
EP0759416(A2) |
申请公布日期 |
1997.02.26 |
申请号 |
EP19960401796 |
申请日期 |
1996.08.19 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KANO, SHOJI;NAKAJIMA, RYOJI;KAWADA, NOBUO;KUROSAWA, YUKIO |
分类号 |
C04B41/87;C04B35/583;C04B41/50;C04B41/51;C04B41/85;C04B41/88;C30B15/10;C30B23/06;C30B35/00;H01L21/203;(IPC1-7):C04B41/87 |
主分类号 |
C04B41/87 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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