| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is simple in configuration and short in refresh cycle time. SOLUTION: A row decoder 13 generates the row adress signals 0 to (m-a)2<n> -1} whose number is smaller than that of rows m2<n> in response to a refresh indicating signal/CBR and the row address signals A0 to (Ai-1) outputted from an address counter 12. Two rows of data are refreshed for each of row addresses, 0 to (a2<n> -1), and one row of data is refreshed for each of row adresses, a2<n> to (m-a)2<n> -1}. Therefore no unnecessary row address signal is generated even when the number of rows is other than a power of 2:m2<n> . |
