| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer whose shape is based on both economical efficiency and practicability. SOLUTION: A square epitaxial wafer 1, for an LED, is composed of a single hetero (SH) structure or a double hetero (DH) structure which is formed by epitaxially growing GaAlAs on a GaAs substrate. The epitaxial wafer is featured by rectilinear corners 4 formed at four corners. |
