Methods for detecting short-circuited signal lines in nonvolatile semiconductor memory and circuitry therefor

摘要

Alternative methods for detecting a short-circuit between signal lines in an electrically erasable and programmable nonvolatile semiconductor memory device use circuitry for detecting short-circuited signal lines. One method includes the steps of: floating first and second signal lines in response to another external input; simultaneously forming an electrical path between the first and second signal lines and each test pad; and determining whether a current path is formed between the test pads, for detecting any short-circuit between the first and second signal lines. Another method includes the steps of: floating the first and second signal lines in response to another external input; simultaneously forming the electrical path between the first signal line and the test pad while discharging the second signal line to the reference potential; and determining whether a current path is formed from the test pad to the reference potential, for detecting any short-circuit between the first and second signal lines.