发明名称 |
DRAM and MROM cells with similar structure |
摘要 |
A semiconductor memory has a random access memory (DRAM) and a mask read only memory (MROM) formed on the same semiconductor substrate; each of the DRAM and MROM comprising a plurality of word lines, a plurality of bit lines and a plurality of memory cells: each of the memory cells included in the DRAM and the MROM comprising; a switching element including a source and drain regions and a gate electrode; a capacitance element formed of a lamination of an insulating film and a plate electrode subsequently laminated in this order; and a conductive parts connecting the switching element to the word lines, the bit lines, and a capacitance element; the MROM including a predetermined memory cell which lacks at least one part of the conductive parts.
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申请公布号 |
US5606193(A) |
申请公布日期 |
1997.02.25 |
申请号 |
US19940316835 |
申请日期 |
1994.10.03 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
UEDA, NAOKI;YAMAUCHI, YOSHIMITSU;TANAKA, KENICHI |
分类号 |
H01L27/105;H01L27/108;(IPC1-7):H01L29/78 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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