| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce characteristics variation of a driving circuit built-in type thin film transistor array using high mobility thin film transistors, and improve the display quality of a liquid display device. SOLUTION: In the thin film transistor, the total sum of the resistance value of a polycrystalline silicon thin film forming a source region and a drain region, and the contact resistance of the polycrystalline silicon thin film and metal or a metal oxide thin film is at least 35kωand at most 200kω. The thickness of a polycrystalline silicon thin film 10 is 100nm. The width of a gate electrode, e.g., the channel length L of the thin film transistor is 10μm. The channel widths WS and WD are 6μm. The distances LS and LD) from the end portion of the gate electrode 11 to contact hole parts 13, 14 are 10μm. The resistivityρis 1×10<-1> (Ω.cm), and Rcs and Rcd are 10kΩ. A relation RS=Rd =l6.7kΩis held, and a series resistance component R is 53.4kΩ.</p> |
