FORMING METHOD OF RESIST PATTERN AND PRODUCTION OF PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To improve adhesion property between a base substrate and a resist material when a resist pattern is formed for a photomask and the like. SOLUTION: A thin film layer 3 of org. molecules is formed by chemical modification method on the interface between a resist material and a base substrate 1 such as a silicon wafer and a photomask to improve the adhesion strength of the resist with the substrate 1. The thin film layer 3 of org. molecules can be formed by silane coupling treatment and LB method is effective as a coating method. As for the resist, a chemically amplifying resist can be used. By forming the thin film layer 3 of org. molecules, the adhesion strength between the resist material and the base substrate can be increased, which improves the cross section of the resist pattern, prevents dropping of the resist pattern having <=2μm line width and decreases the shift amt. in the etching dimension.