| 摘要 |
PROBLEM TO BE SOLVED: To enhance the temperature characteristics of a semiconductor laser having an active layer of strain compensation multiple quantum well structure. SOLUTION: The AlGaInP based semiconductor laser comprises an n-type AlGaInP clad layer 3, an n-type AlGaInP optical waveguide layer 4, an active layer 5 of strain compensation multiple quantum well structure, a p-type AlGaInP optical waveguide layer 6, and a p-type AlGaInP clad layer 7, wherein the n-type AlGaInP optical waveguide layer 4 and the p-type AlGaInP optical waveguide layer 6 are strained similarly to the barrier wall of active layer 5. |
