| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for evaluation of the defect distribution in a semiconductor, to provide a technique to presume the chemical state of defect, and to provide a method of evaluation of the number of defects. SOLUTION: The distribution of defects is recognized by measuring the distribution of hydrogen by allowing the defects in a semiconductor to adsorb hydrogen, the state of defects is found by analyzing the secondary ion mass of thermal desorbing atoms, the rate of peak strength of spectral is obtained and the number of defects is computed. |
