| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a process for producing a phase shift mask, etc., which obviates the occurrence of a fluctuation in the sizes of patterns by the slopes of a resist layer arising near the differences in level, eliminates the need for making exposure by changing an exposure and does not necessitate the drastic change in manufacturing stages as compared with the conventional methods. SOLUTION: Initial light shielding film patterns 2 are formed on a substrate 1 and the substrate 1 exposed from these light shielding film patterns 2 is etched by a first depth. A negative resist 3 is then applied on the initial light shielding film patterns 2 and thereafter, the negative resist 3 of the prescribed parts on the light shielding films 2 is exposed 4 and the entire surface is exposed 4 from the substrate side. The negative resist 3 is developed as a mask and the light shielding films 2 exposed from this mask are etched. Further, the substrate 1 exposed from the mask is etched 6 by as much as the second depth. The substrate 1 is etched to the depths of >=2 steps by repeating the similar stage of the prescribed number of times.</p> |
