发明名称 DEVICE SIMULATION METHOD
摘要 PROBLEM TO BE SOLVED: To improve convergence of solution, speed up analysis, and reduce operation time, in the region of a basic equation where nonlinearity is intense. SOLUTION: In the course of calculation using a Newton repetition method, in the numerial analysis of a semiconductor device by using a computer, when the electric field change amountδΨi in a high electric field region (|Ei+1 ,1|>Elim ) exceeds the upper limit valueδΨi , damper is applied to the potential change amountδΨi , and repetition calculation is executed.
申请公布号 JPH0955505(A) 申请公布日期 1997.02.25
申请号 JP19950208885 申请日期 1995.08.16
申请人 NEC CORP 发明人 YOKOTA IKUHIRO
分类号 H01L21/66;G06F17/50;H01L29/00;H01L29/78;(IPC1-7):H01L29/78 主分类号 H01L21/66
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