发明名称 |
Bipolar resonant tunneling transistor |
摘要 |
Base contacts are made to one or both barrier layers of a resonant tunneling bipolar transistor, rather than to the quantum well. This is made possible with the use of a type II rather than a type I energy band alignment in the active region.
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申请公布号 |
US5606178(A) |
申请公布日期 |
1997.02.25 |
申请号 |
US19950477683 |
申请日期 |
1995.06.07 |
申请人 |
HUGHES ELECTRONICS |
发明人 |
SCHULMAN, JOEL N.;CHOW, DAVID H. |
分类号 |
H01L29/737;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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