发明名称 |
IMPREGNATED CATHODE STRUCTURE, CATHODE SUBSTRATE USED FOR IT, ELECTRON GUN STRUCTURE USING IT, AND ELECTRON TUBE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a superior characteristic impregnating cathode ray structure having ion bombardment resistance by providing a large-grain-size, low- void-ratio range which has specific values for mean grain size, porosity and contains an electron emitting material, and a small-grain-size, high-void-ratio range having specific vales of a mean grain size and a void ratio in a porous cathode substrate. SOLUTION: A large-grain-size, low-void-ratio range 22 which has a mean grain size 2-10μm, a void ratio 15-25%, and has an electron emitting material 24 impregnated, and a small-grain-size, high-void-ratio range 23 having a mean grain size 0.1-2.0μm and a void ratio 25-40% are provided in an electron emission face side of a porous cathode substrate so as to be formed into a cathode ray structure. This constitution provides an impregnating cathode structure having sufficient ion bombardment resistance and superior electron emission characteristics even under high voltage and high frequency conditions.</p> |
申请公布号 |
JPH0955159(A) |
申请公布日期 |
1997.02.25 |
申请号 |
JP19960144524 |
申请日期 |
1996.06.06 |
申请人 |
TOSHIBA ELECTRON ENG CORP;TOSHIBA CORP |
发明人 |
UDA EIICHIRO;HIGUCHI TOSHIHARU;NAKAMURA OSAMU;KOYAMA KIYOMI;MATSUMOTO SADAO;OUCHI YOSHIAKI;KOBAYASHI KAZUO;HONMA KATSUHISA;SUDO TAKASHI |
分类号 |
H01J1/28;H01J9/04;H01J23/04;H01J29/04;(IPC1-7):H01J1/28 |
主分类号 |
H01J1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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